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Crucial Technology BLE4G3D1869DE1TX0. 4GB
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology BLE4G3D1869DE1TX0. 4GB vs Crucial Technology CT51264BD160B.C16F 4GB

总分
star star star star star
Crucial Technology BLE4G3D1869DE1TX0. 4GB

Crucial Technology BLE4G3D1869DE1TX0. 4GB

总分
star star star star star
Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

差异 规格 评论

差异

Crucial Technology BLE4G3D1869DE1TX0. 4GB 需要考虑的原因
Crucial Technology BLE4G3D1869DE1TX0. 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 41
    左右 22% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 9.7
    测试中的平均数值
Crucial Technology CT51264BD160B.C16F 4GB 需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB
报告一个错误
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLE4G3D1869DE1TX0. 4GB
Crucial Technology CT51264BD160B.C16F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    32 left arrow 41
  • 读取速度，GB/s
    15.5 left arrow 13.9
  • 写入速度，GB/s
    10.5 left arrow 9.7
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2733 left arrow 2366

Crucial Technology BLE4G3D1869DE1TX0. 4GB RAM的比较

Corsair CMK32GX4M4K4133C19 8GB

Crucial Technology CT51264BD160B.C16F 4GB RAM的比较

Corsair CMZ8GXMA1600C9 512MB
Samsung M393A4K40BB1-CRC 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
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内存RAM
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