Crucial Technology BLS16G4D240FSB.16FAD 16GB vs Crucial Technology CT16G4DFRA266.C8FE 16GB

总分

Crucial Technology BLS16G4D240FSB.16FAD 16GB

Crucial Technology BLS16G4D240FSB.16FAD 16GB

总分

Crucial Technology CT16G4DFRA266.C8FE 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

差异规格评论

差异

Crucial Technology BLS16G4D240FSB.16FAD 16GB

需要考虑的原因
Crucial Technology BLS16G4D240FSB.16FAD 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 31

左右 3% 更低的延时
更快的读取速度，GB/s

17.4 16.3

测试中的平均数值
更快的写入速度，GB/s

12.9 11.7

测试中的平均数值

Crucial Technology CT16G4DFRA266.C8FE 16GB

需要考虑的原因
Crucial Technology CT16G4DFRA266.C8FE 16GB

报告一个错误

更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS16G4D240FSB.16FAD 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

30 31
读取速度，GB/s

17.4 16.3
写入速度，GB/s

12.9 11.7
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

3310 3179

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

Crucial Technology CT4G4DFS8213.C8FAR2 4GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

SK Hynix HMA82GU6AFR8N-UH 16GB

SK Hynix HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Kingston KF3600C16D4/8GX 8GB

Kingston KF3600C16D4/8GX 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Corsair CMK16GX4M2K4500C19 8GB

Corsair CMK16GX4M2K4500C19 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

G Skill Intl F4-3600C14-8GVKA 8GB

G Skill Intl F4-3600C14-8GVKA 8GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingston 9905711-035.A00G 8GB

Kingston 9905711-035.A00G 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

Crucial Technology BLS8G4D26BFSC.16FE 8GB

G Skill Intl F4-4133C19-8GTZC 8GB

G Skill Intl F4-4133C19-8GTZC 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

Wilk Elektronik S.A. GR2666D464L19/16G 16GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB