RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMU16GX4M2A2666C16 8GB
比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Corsair CMU16GX4M2A2666C16 8GB
总分
Crucial Technology BLS4G4D240FSE.8FBD 4GB
总分
Corsair CMU16GX4M2A2666C16 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
30
左右 3% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Corsair CMU16GX4M2A2666C16 8GB
报告一个错误
更快的读取速度,GB/s
17
16.9
测试中的平均数值
更快的写入速度,GB/s
12.7
12.0
测试中的平均数值
规格
完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMU16GX4M2A2666C16 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
29
30
读取速度,GB/s
16.9
17.0
写入速度,GB/s
12.0
12.7
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2601
3142
Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较
SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Corsair CMU16GX4M2A2666C16 8GB RAM的比较
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1K70CH0-CH9 8GB
EXCELERAM D4168G8HHSS9CJRB21 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMU16GX4M2A2666C16 8GB
Kingston 9905471-001.A01LF 2GB
Corsair CMK16GX4M2A2133C13 8GB
Samsung M393B2G70BH0-CH9 16GB
Kllisre 0000 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CM4B16G4J2400A16K2-O 16GB
Kingston KHX1600C9D3/8G 8GB
SK Hynix HMA41GR7AFR8N-UH 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BLS8G4D32AESEK.M8FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Gloway International (HK) STKD4GAM2133-F 8GB
Kingston 9965662-016.A00G 16GB
Corsair CMD16GX4M2B3600C18 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BLM16G40C18U4B.M8FB1 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
SK Hynix GKE160SO102408-2400 16GB
报告一个错误
×
Bug description
Source link