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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS8266.M8FB 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Crucial Technology CT8G4SFS8266.M8FB 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Crucial Technology CT8G4SFS8266.M8FB 8GB

Crucial Technology CT8G4SFS8266.M8FB 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 35
    左右 17% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 14.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 6.8
    测试中的平均数值
Crucial Technology CT8G4SFS8266.M8FB 8GB 需要考虑的原因
Crucial Technology CT8G4SFS8266.M8FB 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 35
  • 读取速度，GB/s
    16.9 left arrow 14.8
  • 写入速度，GB/s
    12.0 left arrow 6.8
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2091

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Crucial Technology CT8G4SFS8266.M8FB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Apacer Technology 78.CAGN7.4000C 8GB
Apacer Technology 78.CAGN7.4000C 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Corsair CMK64GX4M4B3333C16 16GB
Corsair CMK64GX4M4B3333C16 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3600C17-16GTZ 16GB
G Skill Intl F4-3600C17-16GTZ 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
INTENSO 5641152 4GB
INTENSO 5641152 4GB
内存RAM
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
SK Hynix HMA41GR7AFR8N-TF 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
Galaxy Microsystems Ltd. GALAX OC LAB 8GB
内存RAM