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Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZKY 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-3200C14-8GTZKY 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
G Skill Intl F4-3200C14-8GTZKY 8GB

G Skill Intl F4-3200C14-8GTZKY 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
G Skill Intl F4-3200C14-8GTZKY 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GTZKY 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 29
    左右 -32% 更低的延时
  • 更快的读取速度，GB/s
    20.4 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.2 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZKY 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 22
  • 读取速度，GB/s
    16.9 left arrow 20.4
  • 写入速度，GB/s
    12.0 left arrow 16.2
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 3779

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

G Skill Intl F4-3200C14-8GTZKY 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C14-8GTZKY 8GB
G Skill Intl F4-3200C14-8GTZKY 8GB
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Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
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Micron Technology 8ATF1G64HZ-2G6H1 8GB
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Samsung M3 78T5663RZ3-CE6 2GB
Golden Empire CL16-18-18 D4-3200 8GB
Golden Empire CL16-18-18 D4-3200 8GB
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Samsung M393A1G40DB0-CPB 8GB
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PNY Electronics PNY 2GB
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Samsung M471A1K43DB1-CWE 8GB
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Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
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Crucial Technology CT16G4SFS832A.C8FE 16GB
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Kingston 9905316-106.A02LF 1GB
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SK Hynix HMA82GS6CJR8N-VK 16GB
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Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
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SK Hynix 8GB
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Kingston KMKYF9-MID 8GB
内存RAM
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Samsung M471B5173QH0-YK0 4GB
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内存RAM
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Kingston 9965525-144.A00LF 8GB
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Samsung V-GeN D4S8GL30A8TX5 8GB
内存RAM
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Ramos Technology RMB4GB58BCA3-13HC 4GB
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Crucial Technology BLS16G4D32AEST.M16FE 16GB
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Nanya Technology NT1GT64U88D0BY-AD 1GB
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Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM
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Samsung M471B5273EB0-CK0 4GB
Kingston 9905624-044.A00G 8GB
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