Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-3466C16-16GTZSW 16GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

G Skill Intl F4-3466C16-16GTZSW 16GB

G Skill Intl F4-3466C16-16GTZSW 16GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3466C16-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3466C16-16GTZSW 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 -7% 更低的延时
更快的读取速度，GB/s

17.7 16.9

测试中的平均数值
更快的写入速度，GB/s

14.6 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3466C16-16GTZSW 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 27
读取速度，GB/s

16.9 17.7
写入速度，GB/s

12.0 14.6
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 3587

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Samsung M378A2K43CB1-CTD 16GB

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Corsair CMK32GX5M2B5600C36 16GB

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A-DATA Technology AD73I1B1672EG 2GB

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Corsair CMH32GX4M2Z3600C18 16GB

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Samsung M471B1G73QH0-YK0 8GB

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Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Micron Technology 18ASF2G72AZ-2G3B1 16GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Crucial Technology BLM16G44C19U4B.M8FB1 16GB

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