Crucial Technology BLS4G4D240FSE.8FBD 4GB vs G Skill Intl F4-3600C17-8GTZKW 8GB

总分

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分

G Skill Intl F4-3600C17-8GTZKW 8GB

G Skill Intl F4-3600C17-8GTZKW 8GB

差异规格评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3600C17-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3600C17-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 -12% 更低的延时
更快的读取速度，GB/s

17.7 16.9

测试中的平均数值
更快的写入速度，GB/s

14.5 12.0

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3600C17-8GTZKW 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

29 26
读取速度，GB/s

16.9 17.7
写入速度，GB/s

12.0 14.5
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2601 3547

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Mushkin MRA4S293MMMF32G 32GB

Mushkin MRA4S293MMMF32G 32GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Team Group Inc. TEAMGROUP-D4-3600 4GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Golden Empire CL15-17-17 D4-2666 8GB

Golden Empire CL15-17-17 D4-2666 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Corsair CMT16GX4M2C3200C16 8GB

Corsair CMT16GX4M2C3200C16 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Avant Technology J641GU42J7240ND 8GB

Avant Technology J641GU42J7240ND 8GB

Kingston K1CXP8-MIE 16GB

Kingston K1CXP8-MIE 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-2400C15-16GVR 16GB

G Skill Intl F4-2400C15-16GVR 16GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Crucial Technology BLS16G4D240FSE.16FBD 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3200C15-16GTZR 16GB

G Skill Intl F4-3200C15-16GTZR 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BL8G32C16U4R.8FE 8GB

Crucial Technology BL8G32C16U4R.8FE 8GB