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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A2K43CB1-CRC 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Samsung M471A2K43CB1-CRC 16GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 38
    左右 24% 更低的延时
  • 更快的读取速度，GB/s
    16.9 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 9.1
    测试中的平均数值
Samsung M471A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M471A2K43CB1-CRC 16GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A2K43CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 38
  • 读取速度，GB/s
    16.9 left arrow 13.8
  • 写入速度，GB/s
    12.0 left arrow 9.1
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 2404

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Samsung M471A2K43CB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
内存RAM
Samsung M3 78T2863RZS-CF7 1GB
Samsung M3 78T2863RZS-CF7 1GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
Ramaxel Technology RMUA5090KE68H9F2133 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
Ramaxel Technology RMUA5180ME78HBF-2666 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Super Talent F24UB16GV 16GB
Super Talent F24UB16GV 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905630-066.A00G 16GB
Kingston 9905630-066.A00G 16GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Panram International Corporation W4U2133PS-8G 8GB
Panram International Corporation W4U2133PS-8G 8GB
内存RAM
Kingston ACR16D3LU1MNG/8G 8GB
Kingston ACR16D3LU1MNG/8G 8GB
Kingston 9905625-152.A00G 16GB
Kingston 9905625-152.A00G 16GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
内存RAM
Kingston KF556C40-16 16GB
Kingston KF556C40-16 16GB
Kingston SMD4-S8G48HJ-26V 8GB
Kingston SMD4-S8G48HJ-26V 8GB
内存RAM