RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Terabyte Co Ltd RCX2-16G3000R 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB vs Terabyte Co Ltd RCX2-16G3000R 8GB

总分
star star star star star
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

总分
star star star star star
Terabyte Co Ltd RCX2-16G3000R 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB

差异 规格 评论

差异

Crucial Technology BLS4G4D240FSE.8FBD 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSE.8FBD 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Terabyte Co Ltd RCX2-16G3000R 8GB 需要考虑的原因
Terabyte Co Ltd RCX2-16G3000R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 29
    左右 -45% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 12.0
    测试中的平均数值

规格

完整的技术规格清单
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Terabyte Co Ltd RCX2-16G3000R 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 20
  • 读取速度，GB/s
    16.9 left arrow 19.5
  • 写入速度，GB/s
    12.0 left arrow 15.8
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2601 left arrow 3483

Crucial Technology BLS4G4D240FSE.8FBD 4GB RAM的比较

SK Hynix HMA81GS6CJR8N-VK 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378A5143TB2-CTD 4GB
Samsung M378A5143TB2-CTD 4GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Panram International Corporation W4U2666P-8G 8GB
Panram International Corporation W4U2666P-8G 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Kingston 9965596-036.B00G 8GB
Kingston 9965596-036.B00G 8GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
Corsair CM4X8GF2400Z16K4 8GB
Corsair CM4X8GF2400Z16K4 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Essencore Limited KD4AGSA8A-32N2200 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Avant Technology W644GU44J2320NH 32GB
Avant Technology W644GU44J2320NH 32GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Kingston 8ATF1G64HZ-2G3B2 8GB
Kingston 8ATF1G64HZ-2G3B2 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMN32GX4M2Z3600C18 16GB
Corsair CMN32GX4M2Z3600C18 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
SK Hynix HMA82GR7AFR8N-UH 16GB
SK Hynix HMA82GR7AFR8N-UH 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avant Technology W641GU67J7240N8 8GB
Avant Technology W641GU67J7240N8 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
内存RAM