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Crucial Technology BLS8G3N169ES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Crucial Technology BLS8G3N169ES4.16FE 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

总分
star star star star star
Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

差异 规格 评论

差异

Crucial Technology BLS8G3N169ES4.16FE 8GB 需要考虑的原因
Crucial Technology BLS8G3N169ES4.16FE 8GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 41
    左右 -41% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology BLS8G3N169ES4.16FE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 29
  • 读取速度，GB/s
    13.3 left arrow 13.7
  • 写入速度，GB/s
    8.8 left arrow 9.8
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2394 left arrow 2407

Crucial Technology BLS8G3N169ES4.16FE 8GB RAM的比较

Samsung M471B5673FH0-CH9 2GB
Apacer Technology D12.2324CS.001 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB RAM的比较

Kingston 9905403-090.A01LF 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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