Crucial Technology BLS8G3N18AES4.16FE 8GB vs A-DATA Technology AO1P32NC8W1-BDZS 8GB

总分

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分

A-DATA Technology AO1P32NC8W1-BDZS 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

差异规格评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

42 58

左右 28% 更低的延时

A-DATA Technology AO1P32NC8W1-BDZS 8GB

需要考虑的原因
A-DATA Technology AO1P32NC8W1-BDZS 8GB

报告一个错误

更快的读取速度，GB/s

16.3 13.2

测试中的平均数值
更快的写入速度，GB/s

12.2 9.4

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N18AES4.16FE 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 58
读取速度，GB/s

13.2 16.3
写入速度，GB/s

9.4 12.2
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2326 2591

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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Samsung M4 70T2864EH3-CF7 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston ACR24D4U7S8MB-8 8GB