Crucial Technology BLS8G3N18AES4.16FE 8GB vs Corsair CMW64GX4M4Z2933C16 16GB

总分

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

总分

Corsair CMW64GX4M4Z2933C16 16GB

Corsair CMW64GX4M4Z2933C16 16GB

差异规格评论

差异

Crucial Technology BLS8G3N18AES4.16FE 8GB

需要考虑的原因
Crucial Technology BLS8G3N18AES4.16FE 8GB

报告一个错误

Corsair CMW64GX4M4Z2933C16 16GB

需要考虑的原因
Corsair CMW64GX4M4Z2933C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 42

左右 -40% 更低的延时
更快的读取速度，GB/s

17.4 13.2

测试中的平均数值
更快的写入速度，GB/s

14.5 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLS8G3N18AES4.16FE 8GB

Corsair CMW64GX4M4Z2933C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 30
读取速度，GB/s

13.2 17.4
写入速度，GB/s

9.4 14.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2326 3579

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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G Skill Intl F4-3000C16-8GVRB 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Crucial Technology BLS8G4S240FSD.M16FAD 8GB

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Qimonda 72T128420EFA3SB2 1GB

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G Skill Intl F4-3300C16-4GRKD 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB