Crucial Technology BLT2G3D1608DT1TX0 2GB vs G Skill Intl F4-4266C17-16GTZRB 16GB

总分

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

总分

G Skill Intl F4-4266C17-16GTZRB 16GB

G Skill Intl F4-4266C17-16GTZRB 16GB

差异规格评论

差异

Crucial Technology BLT2G3D1608DT1TX0 2GB

需要考虑的原因
Crucial Technology BLT2G3D1608DT1TX0 2GB

报告一个错误

G Skill Intl F4-4266C17-16GTZRB 16GB

需要考虑的原因
G Skill Intl F4-4266C17-16GTZRB 16GB

报告一个错误

更快的读取速度，GB/s

22.4 13.6

测试中的平均数值
更快的写入速度，GB/s

20.1 9.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-4266C17-16GTZRB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 23
读取速度，GB/s

13.6 22.4
写入速度，GB/s

9.4 20.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2096 4421

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF51264HZ-2G1A2 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB

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Samsung M4 70T5663QZ3-CF7 2GB

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Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Kingston 99U5471-020.A00LF 4GB

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Apacer Technology GD2.2229BH.001 16GB

Apacer Technology GD2.2229BH.001 16GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB