Crucial Technology CT102464BF160B-16F 8GB vs Wilk Elektronik S.A. W-MEM2666S416G 16GB

总分

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

总分

Wilk Elektronik S.A. W-MEM2666S416G 16GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

差异规格评论

差异

Crucial Technology CT102464BF160B-16F 8GB

需要考虑的原因
Crucial Technology CT102464BF160B-16F 8GB

报告一个错误

Wilk Elektronik S.A. W-MEM2666S416G 16GB

需要考虑的原因
Wilk Elektronik S.A. W-MEM2666S416G 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 29

左右 -21% 更低的延时
更快的读取速度，GB/s

16.9 12.8

测试中的平均数值
更快的写入速度，GB/s

14.5 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B-16F 8GB

Wilk Elektronik S.A. W-MEM2666S416G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 24
读取速度，GB/s

12.8 16.9
写入速度，GB/s

9.4 14.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2282 3095

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905622-025.A01G 4GB

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Kingston 9905711-002.A00G 4GB

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Kingston 99U5474-010.A00LF 2GB

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Samsung M471A5244CB0-CRC 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston KHX2133C13S4/8G 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Team Group Inc. Team-Elite-2133 4GB

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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Transcend Information AQD-D4U4GN21-SG 4GB

Transcend Information AQD-D4U4GN21-SG 4GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

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