RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB

Crucial Technology CT102464BF160B.C16 8GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB

总分
star star star star star
Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分
star star star star star
Crucial Technology BLS16G4D30AESC.M16FE 16GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

差异 规格 评论

差异

Crucial Technology CT102464BF160B.C16 8GB 需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB
报告一个错误
Crucial Technology BLS16G4D30AESC.M16FE 16GB 需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 44
    左右 -57% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 12.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 8.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 28
  • 读取速度，GB/s
    12.6 left arrow 17.4
  • 写入速度，GB/s
    8.6 left arrow 13.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2193 left arrow 3437

Crucial Technology CT102464BF160B.C16 8GB RAM的比较

Samsung M471B1G73QH0-YK0 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Apacer Technology GD2.0918CT.001 4GB
Apacer Technology GD2.0918CT.001 4GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
Kingston 9905702-020.A00G 8GB
Kingston 9905702-020.A00G 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
Crucial Technology CT8G4DFS824A.M8FB 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
V-GEN D4H16GS24A8 16GB
V-GEN D4H16GS24A8 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C17-4GVK 4GB
G Skill Intl F4-3600C17-4GVK 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
Crucial Technology CT8G4DFD8213.C16FBD2 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston 9905701-022.A00G 16GB
Kingston 9905701-022.A00G 16GB
内存RAM