Crucial Technology CT102464BF160B.C16 8GB vs G Skill Intl F4-2666C15-8GVB 8GB

总分

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

总分

G Skill Intl F4-2666C15-8GVB 8GB

G Skill Intl F4-2666C15-8GVB 8GB

差异规格评论

差异

Crucial Technology CT102464BF160B.C16 8GB

需要考虑的原因
Crucial Technology CT102464BF160B.C16 8GB

报告一个错误

G Skill Intl F4-2666C15-8GVB 8GB

需要考虑的原因
G Skill Intl F4-2666C15-8GVB 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 44

左右 -47% 更低的延时
更快的读取速度，GB/s

17.7 12.6

测试中的平均数值
更快的写入速度，GB/s

11.8 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT102464BF160B.C16 8GB

G Skill Intl F4-2666C15-8GVB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 30
读取速度，GB/s

12.6 17.7
写入速度，GB/s

8.6 11.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2193 3119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO2P24HCST2-BTVS 16GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston HX426C16FB2/8-SP 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Crucial Technology BL16G26C16U4B.16FE 16GB

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AMD R748G2400S2S 8GB

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Samsung M378A1G43EB1-CRC 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Mushkin 99[2/7/4]209F 8GB

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AMD R538G1601U2S 8GB

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G Skill Intl F4-2666C15-8GVK 8GB

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Team Group Inc. UD5-6400 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Mushkin 99[2/7/4]183 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT8G4SFS824A.M8FE 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston KF3200C20S4/16G 16GB

Kingston KF3200C20S4/16G 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB