Crucial Technology CT16G48C40U5.M8A1 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

总分

Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

总分

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

差异规格评论

差异

Crucial Technology CT16G48C40U5.M8A1 16GB

需要考虑的原因
Crucial Technology CT16G48C40U5.M8A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 31

左右 23% 更低的延时

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

需要考虑的原因
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

报告一个错误

更快的读取速度，GB/s

20.5 14.4

测试中的平均数值
更快的写入速度，GB/s

15.5 12.3

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT16G48C40U5.M8A1 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

24 31
读取速度，GB/s

14.4 20.5
写入速度，GB/s

12.3 15.5
内存带宽，mbps

19200 25600

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

no data / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3392 3649

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology CT16G48C40U5.M8A1 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Kingston KHX3466C16D4/8GX 8GB

Kingston KHX3466C16D4/8GX 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Patriot Memory (PDP Systems) PSD44G213382 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M378A2K43CB1-CRC 16GB

Samsung M378A2K43CB1-CRC 16GB

AMD R538G1601U2S-UGO 8GB

AMD R538G1601U2S-UGO 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston 99U5743-031.A00G 16GB

Kingston 99U5743-031.A00G 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3600C16-8GTZKW 8GB

G Skill Intl F4-3600C16-8GTZKW 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston 9905744-062.A00G 32GB

Kingston 9905744-062.A00G 32GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208