Crucial Technology CT16G4SFRA266.M16FRS 16GB vs Corsair CMSX16GX4M1A2666C18 16GB

总分

Crucial Technology CT16G4SFRA266.M16FRS 16GB

Crucial Technology CT16G4SFRA266.M16FRS 16GB

总分

Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

差异规格评论

差异

Crucial Technology CT16G4SFRA266.M16FRS 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA266.M16FRS 16GB

报告一个错误

Corsair CMSX16GX4M1A2666C18 16GB

需要考虑的原因
Corsair CMSX16GX4M1A2666C18 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 38

左右 -12% 更低的延时
更快的读取速度，GB/s

15.6 14.1

测试中的平均数值
更快的写入速度，GB/s

13.1 8.8

测试中的平均数值

规格

完整的技术规格清单

Crucial Technology CT16G4SFRA266.M16FRS 16GB

Corsair CMSX16GX4M1A2666C18 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 34
读取速度，GB/s

14.1 15.6
写入速度，GB/s

8.8 13.1
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2483 3043

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

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Kingston KHX1600C9D3/8G 8GB

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Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Kingston LV32D4U2S8HD-8X 8GB

Kingston LV32D4U2S8HD-8X 8GB

Samsung M393B1G70BH0-YK0 8GB

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Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Vasekey M378A1K43BB2-CPB 8GB

Vasekey M378A1K43BB2-CPB 8GB