Crucial Technology CT25664AA800.M16FG 2GB vs Kingmax Semiconductor GSLG42F-18---------- 8GB

总分

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

总分

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FG 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FG 2GB

报告一个错误

低于PassMark测试中的延时，ns

52 99

左右 47% 更低的延时
更快的读取速度，GB/s

4 14.2

测试中的平均数值

Kingmax Semiconductor GSLG42F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GSLG42F-18---------- 8GB

报告一个错误

更快的写入速度，GB/s

6.9 2,027.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FG 2GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 99
读取速度，GB/s

4,837.1 14.2
写入速度，GB/s

2,027.0 6.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

794 1499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99P5471-002.A00LF 2GB

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Samsung M391A2K43BB1-CTD 16GB

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Hua Nan San Xian Technology Co Ltd HNMI8GD4240D0 8GB

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Kingston KHX1600C9D3/8G 8GB

Corsair CMR32GX4M2C3333C16 16GB

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

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Kingston 9905701-132.A00G 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Corsair CMT32GX4M2E3200C16 16GB