Crucial Technology CT25664AA800.M16FM 2GB vs G Skill Intl F4-4266C19-8GTZA 8GB

总分

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

总分

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

差异规格评论

差异

Crucial Technology CT25664AA800.M16FM 2GB

需要考虑的原因
Crucial Technology CT25664AA800.M16FM 2GB

报告一个错误

更快的读取速度，GB/s

5 18

测试中的平均数值
更快的写入速度，GB/s

2,135.0 15.2

测试中的平均数值

G Skill Intl F4-4266C19-8GTZA 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTZA 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 51

左右 -82% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-4266C19-8GTZA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

51 28
读取速度，GB/s

5,021.4 18.0
写入速度，GB/s

2,135.0 15.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

855 3660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Crucial Technology BL8G32C16U4B.8FE 8GB

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Crucial Technology BL8G32C16U4B.M8FE 8GB

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A-DATA Technology DDR3 1333G 2GB

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SK Hynix HMA82GR8AMR4N-TF 16GB

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Mushkin 99[2/7/4]198F 8GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Kingston 9905663-012.A00G 16GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Crucial Technology CT4G4DFS824A.C8FHP 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK32GX4M2A2400C16 16GB

Corsair CMK32GX4M2A2400C16 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB