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Crucial Technology CT25664BA160B.C16F 2GB
A-DATA Technology DDR4 3200 2OZ 4GB
比较
Crucial Technology CT25664BA160B.C16F 2GB vs A-DATA Technology DDR4 3200 2OZ 4GB
总分
Crucial Technology CT25664BA160B.C16F 2GB
总分
A-DATA Technology DDR4 3200 2OZ 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB
报告一个错误
更快的读取速度,GB/s
17.2
14.3
测试中的平均数值
更快的写入速度,GB/s
13.8
10.1
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
A-DATA Technology DDR4 3200 2OZ 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
29
读取速度,GB/s
14.3
17.2
写入速度,GB/s
10.1
13.8
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2227
3409
Crucial Technology CT25664BA160B.C16F 2GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
A-DATA Technology DDR4 3200 2OZ 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 16ATF1G64HZ-2G1B1 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3733C17-4GVK 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-8GTZR 8GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Kingston 9965525-155.A00LF 8GB
Apacer Technology 78.C2GF6.AU20B 8GB
A-DATA Technology DDR3 1600 4GB
Ramaxel Technology RMSA3310MJ86H9F-3200 4GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology 8G4US2400.M8B1 8GB
A-DATA Technology AD73I1C1674EV 4GB
G Skill Intl F4-2666C19-8GIS 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Samsung M471B5273EB0-CK0 4GB
INTENSO GKE800UD102408-2133 8GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Samsung M471A2K43EB1-CWE 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD32GX4M4C3200C14T 8GB
Hexon Technology Pte Ltd HEXON 1GB
Avant Technology W641GU42J5213N3 8GB
报告一个错误
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Bug description
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