Crucial Technology CT25664BA160B.C16F 2GB vs G Skill Intl F4-3300C16-16GTZ 16GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

G Skill Intl F4-3300C16-16GTZ 16GB

G Skill Intl F4-3300C16-16GTZ 16GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

低于PassMark测试中的延时，ns

29 33

左右 12% 更低的延时
更快的读取速度，GB/s

14.3 10.6

测试中的平均数值
更快的写入速度，GB/s

10.1 8.4

测试中的平均数值

G Skill Intl F4-3300C16-16GTZ 16GB

需要考虑的原因
G Skill Intl F4-3300C16-16GTZ 16GB

报告一个错误

更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

G Skill Intl F4-3300C16-16GTZ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 33
读取速度，GB/s

14.3 10.6
写入速度，GB/s

10.1 8.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2227 2503

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingmax Semiconductor GSLF62F-D8---------- 4GB

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Samsung M471B1G73DB0-YK0 8GB

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Corsair CMD32GX4M2C3200C14T 16GB

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

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Corsair CMY8GX3M2A2666C10 4GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Samsung M378A2K43CB1-CTD 16GB