Crucial Technology CT25664BA160B.C16F 2GB vs SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

总分

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

总分

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

差异规格评论

差异

Crucial Technology CT25664BA160B.C16F 2GB

需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB

报告一个错误

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

需要考虑的原因
SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 29

左右 -26% 更低的延时
更快的读取速度，GB/s

18 14.3

测试中的平均数值
更快的写入速度，GB/s

14.0 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT25664BA160B.C16F 2GB

SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 23
读取速度，GB/s

14.3 18.0
写入速度，GB/s

10.1 14.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2227 3327

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

Crucial Technology BLS8G4D26BFSE.16FE 8GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

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SK Hynix HMA82GU6AFR8N-UH 16GB

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Samsung M471A1K1KBB0-CPB 8GB

Samsung M471A1K1KBB0-CPB 8GB