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Crucial Technology CT2K102464BD160B 8GB
G Skill Intl F4-3200C14-16GTRS 16GB

Crucial Technology CT2K102464BD160B 8GB vs G Skill Intl F4-3200C14-16GTRS 16GB

总分
star star star star star
Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

差异 规格 评论

差异

Crucial Technology CT2K102464BD160B 8GB 需要考虑的原因
Crucial Technology CT2K102464BD160B 8GB
报告一个错误
G Skill Intl F4-3200C14-16GTRS 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 38
    左右 -58% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 15.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.0 left arrow 9.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT2K102464BD160B 8GB
G Skill Intl F4-3200C14-16GTRS 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 24
  • 读取速度，GB/s
    15.6 left arrow 20.5
  • 写入速度，GB/s
    9.8 left arrow 17.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2566 left arrow 4064

Crucial Technology CT2K102464BD160B 8GB RAM的比较

A-DATA Technology AE4S240038G17-BHYA 8GB
INTENSO M418039 8GB

G Skill Intl F4-3200C14-16GTRS 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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内存RAM
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内存RAM
Crucial Technology CT2K102464BD160B 8GB
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G Skill Intl F4-3200C14-16GTRS 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
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内存RAM
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内存RAM
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Samsung M393B1K70CH0-CH9 8GB
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Kingston KF3200C20S4/16G 16GB
内存RAM
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内存RAM
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Kingston KHX2400C15D4/4G 4GB
内存RAM
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Lexar Co Limited LD4AU016G-H3200GST 16GB
Transcend Information JM2666HLG-16GK 8GB
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