Crucial Technology CT2K102464BD160B 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Crucial Technology CT2K102464BD160B 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

总分

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

差异规格评论

差异

Crucial Technology CT2K102464BD160B 8GB

需要考虑的原因
Crucial Technology CT2K102464BD160B 8GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 38

左右 -111% 更低的延时
更快的读取速度，GB/s

20.4 15.6

测试中的平均数值
更快的写入速度，GB/s

17.2 9.8

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT2K102464BD160B 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 18
读取速度，GB/s

15.6 20.4
写入速度，GB/s

9.8 17.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2566 3814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Gold Key Technology Co Ltd NMSO480E85-2666E 8GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Golden Empire CL17-17-17 D4-2400 16GB

Golden Empire CL17-17-17 D4-2400 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMV4GX4M1A2666C18 4GB

Corsair CMV4GX4M1A2666C18 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Corsair CMD32GX4M4A2400C14 8GB

Corsair CMD32GX4M4A2400C14 8GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Kingston 9905598-019.A00G 16GB

Kingston 9905598-019.A00G 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3200C16-4GVKB 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston KHX4133C19D4/8GX 8GB

Kingston KHX4133C19D4/8GX 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB