Crucial Technology CT51264AC800.C16FC 4GB vs Golden Empire CL18-20-20 D4-3600 8GB

总分

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

差异规格评论

差异

Crucial Technology CT51264AC800.C16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值
更快的写入速度，GB/s

2,378.6 15.8

测试中的平均数值

Golden Empire CL18-20-20 D4-3600 8GB

需要考虑的原因
Golden Empire CL18-20-20 D4-3600 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 62

左右 -121% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264AC800.C16FC 4GB

Golden Empire CL18-20-20 D4-3600 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 28
读取速度，GB/s

4,670.6 17.7
写入速度，GB/s

2,378.6 15.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

861 3772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378A2G43AB3-CWE 16GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Samsung V-GeN D4S16GL32A8TS 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Kingston K821PJ-MIB 16GB

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Samsung M378B5273CH0-CH9 4GB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMD32GX4M4C3200C16 8GB

Corsair CMD32GX4M4C3200C16 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

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Kingston 9965662-016.A00G 16GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Crucial Technology CT16G4SFD832A.C16FJ 16GB

Crucial Technology CT16G4SFD832A.C16FJ 16GB