Crucial Technology CT51264AC800.C16FC 4GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Crucial Technology CT51264AC800.C16FC 4GB vs Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

总分

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

总分

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

差异规格评论

差异

Crucial Technology CT51264AC800.C16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.C16FC 4GB

报告一个错误

低于PassMark测试中的延时，ns

62 74

左右 16% 更低的延时
更快的读取速度，GB/s

4 13.8

测试中的平均数值

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

需要考虑的原因
Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

报告一个错误

更快的写入速度，GB/s

7.9 2,378.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264AC800.C16FC 4GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 74
读取速度，GB/s

4,670.6 13.8
写入速度，GB/s

2,378.6 7.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

861 1825

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9965600-027.A01G 16GB

Kingston 9965600-027.A01G 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

A-DATA Technology AO1P32MCST2-BZPS 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KF3200C20S4/16G 16GB

Kingston KF3200C20S4/16G 16GB

Corsair CMD8GX3M2A2800C12 4GB

Corsair CMD8GX3M2A2800C12 4GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMK32GX4M4A2400C14 8GB

Corsair CMK32GX4M4A2400C14 8GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

Crucial Technology CT16G4SFRA266.C8FB 16GB

Crucial Technology CT16G4SFRA266.C8FB 16GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Avant Technology J642GU42J2320NQ 16GB

Avant Technology J642GU42J2320NQ 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

Ramaxel Technology RMSA3270MB86H9F2400 4GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

G Skill Intl F4-2666C18-8GFT 8GB

G Skill Intl F4-2666C18-8GFT 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

UMAX Technology D4-2666-8GB-1024X8-L 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB