Crucial Technology CT51264BA1339.C16F 4GB vs Century Micro Inc. CENTURY JAPAN MEMORY 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 36

左右 25% 更低的延时

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

需要考虑的原因
Century Micro Inc. CENTURY JAPAN MEMORY 8GB

报告一个错误

更快的读取速度，GB/s

16 13.9

测试中的平均数值
更快的写入速度，GB/s

13.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 36
读取速度，GB/s

13.9 16.0
写入速度，GB/s

8.4 13.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3313

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology BLT4G3D1337DT1TX0. 4GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Century Micro Inc. CENTURY JAPAN MEMORY 8GB

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

G Skill Intl F4-3600C16-8GTZN 8GB

G Skill Intl F4-3600C16-8GTZN 8GB

G Skill Intl F3-2133C9-4GAB 4GB

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Corsair CMW32GX4M2Z3600C14 16GB

Corsair CMW32GX4M2Z3600C14 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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Crucial Technology BL32G36C16U4BL.M16FB 32GB

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Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-4000C18-16GVK 16GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston KF2666C15S4/8G 8GB

Kingston KF2666C15S4/8G 8GB

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

AMD R948G3206U2S 8GB

AMD R948G3206U2S 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMT32GX4M2D3600C18 16GB

Corsair CMT32GX4M2D3600C18 16GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Nanya Technology M471A5143EB1-CRC 4GB

Nanya Technology M471A5143EB1-CRC 4GB