Crucial Technology CT51264BA1339.C16F 4GB vs Corsair CMD32GX4M4B2400C10 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Corsair CMD32GX4M4B2400C10 8GB

Corsair CMD32GX4M4B2400C10 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Corsair CMD32GX4M4B2400C10 8GB

需要考虑的原因
Corsair CMD32GX4M4B2400C10 8GB

报告一个错误

更快的读取速度，GB/s

16.1 13.9

测试中的平均数值
更快的写入速度，GB/s

11.5 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMD32GX4M4B2400C10 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

13.9 16.1
写入速度，GB/s

8.4 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3130

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 36ASF2G72LZ-2G1A1 16GB

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G Skill Intl F4-4000C15-8GTRG 8GB

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Micron Technology 18ASF2G72AZ-2G1B1 16GB

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Samsung M471B5273CH0-CH9 4GB

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Crucial Technology BLS4G4D26BFSB.8FB 4GB

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Samsung M471A1K43BB1-CRC 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Corsair CMD64GX4M8X3800C19 8GB

Corsair CMD64GX4M8X3800C19 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Kingston 9965604-008.C00G 8GB

Kingston 9965604-008.C00G 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Kingston 9905598-028.A00G 8GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Team Group Inc. TEAMGROUP-UD4-4000 4GB

Team Group Inc. TEAMGROUP-UD4-4000 4GB