Crucial Technology CT51264BA1339.C16F 4GB vs Corsair CMK32GX4M4B2800C14 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Corsair CMK32GX4M4B2800C14 8GB

Corsair CMK32GX4M4B2800C14 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

Corsair CMK32GX4M4B2800C14 8GB

需要考虑的原因
Corsair CMK32GX4M4B2800C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

15.6 13.9

测试中的平均数值
更快的写入速度，GB/s

11.8 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMK32GX4M4B2800C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.9 15.6
写入速度，GB/s

8.4 11.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2251 3038

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M471B5674QH0-YK0 2GB

Samsung M471B5674QH0-YK0 2GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

G Skill Intl F4-3200C22-8GRS 8GB

G Skill Intl F4-3200C22-8GRS 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

G Skill Intl F4-2933C14-8GTZRX 8GB

G Skill Intl F4-2933C14-8GTZRX 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Samsung M378A5244CB0-CRC 4GB

Samsung M378A5244CB0-CRC 4GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M474A2K43BB1-CRC 16GB

Samsung M474A2K43BB1-CRC 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

G Skill Intl F4-3200C14-8GTRG 8GB

G Skill Intl F4-3200C14-8GTRG 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Mushkin MR[A/B]4U300JJJM8G 8GB

Mushkin MR[A/B]4U300JJJM8G 8GB