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Crucial Technology CT51264BA1339.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
比较
Crucial Technology CT51264BA1339.C16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
总分
Crucial Technology CT51264BA1339.C16F 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
37
左右 27% 更低的延时
更快的读取速度,GB/s
13.9
10.4
测试中的平均数值
更快的写入速度,GB/s
8.4
7.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
37
读取速度,GB/s
13.9
10.4
写入速度,GB/s
8.4
7.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2251
2213
Crucial Technology CT51264BA1339.C16F 4GB RAM的比较
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N-UH 8GB RAM的比较
Samsung M393B1G70BH0-CK0 8GB
Samsung M471B5273DH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M471A4G43BB1-CWE 32GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA81GU6CJR8N-UH 8GB
AMD R5316G1609U2K 8GB
SK Hynix HMA81GS6AFR8N-UH 8GB
报告一个错误
×
Bug description
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