Crucial Technology CT51264BA1339.C16F 4GB vs Kingmax Semiconductor GZNG43F-18---------- 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Kingmax Semiconductor GZNG43F-18---------- 8GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 62

左右 56% 更低的延时

Kingmax Semiconductor GZNG43F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GZNG43F-18---------- 8GB

报告一个错误

更快的读取速度，GB/s

16.8 13.9

测试中的平均数值
更快的写入速度，GB/s

9.3 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Kingmax Semiconductor GZNG43F-18---------- 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 62
读取速度，GB/s

13.9 16.8
写入速度，GB/s

8.4 9.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2251 2138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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INTENSO 5641152 4GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Kingmax Semiconductor GZNG43F-18---------- 8GB

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Kingmax Semiconductor GLLF62F-C6---------- 4GB

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G Skill Intl F4-2400C15-8GRK 8GB

Kingston 9905403-500.A01LF 8GB

Kingston 9905403-500.A01LF 8GB

Essencore Limited IM44GU48N26-FFFHM 4GB

Essencore Limited IM44GU48N26-FFFHM 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Samsung M393A2G40DB1-CRC 16GB