Crucial Technology CT51264BA1339.C16F 4GB vs Kingston ACR26D4S9S8KA-8 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Kingston ACR26D4S9S8KA-8 8GB

Kingston ACR26D4S9S8KA-8 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时
更快的读取速度，GB/s

13.9 9

测试中的平均数值
更快的写入速度，GB/s

8.4 7.1

测试中的平均数值

Kingston ACR26D4S9S8KA-8 8GB

需要考虑的原因
Kingston ACR26D4S9S8KA-8 8GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Kingston ACR26D4S9S8KA-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

13.9 9.0
写入速度，GB/s

8.4 7.1
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2251 1546

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Smart Modular SH564128FH8N0QHSCG 4GB

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Corsair CMK32GX4M2A2666C16 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston KHX3200C16D4/32GX 32GB

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G Skill Intl F5-6400J3239G16G 16GB

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SK Hynix HMA84GR7MFR4N-TF 32GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Corsair CMSX16GX4M2A3200C22 8GB

Corsair CMSX16GX4M2A3200C22 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Wilk Elektronik S.A. IRP3600D4V64L18/16G 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB