Crucial Technology CT51264BA1339.C16F 4GB vs Kingston KHX3600C17D4/8GX 8GB

总分

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

总分

Kingston KHX3600C17D4/8GX 8GB

Kingston KHX3600C17D4/8GX 8GB

差异规格评论

差异

Crucial Technology CT51264BA1339.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.C16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Kingston KHX3600C17D4/8GX 8GB

需要考虑的原因
Kingston KHX3600C17D4/8GX 8GB

报告一个错误

更快的读取速度，GB/s

18.8 13.9

测试中的平均数值
更快的写入速度，GB/s

16.1 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.C16F 4GB

Kingston KHX3600C17D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.9 18.8
写入速度，GB/s

8.4 16.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2251 3664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C16-16GTZR 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Gloway International (HK) STK4U2400D17082C 8GB

Samsung M391B5673EH1-CH9 2GB

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Apacer Technology 78.CAGPP.40C0B 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CB16GU2666.C8ET 16GB

Crucial Technology CB16GU2666.C8ET 16GB