Crucial Technology CT51264BA1339.D16F 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Crucial Technology CT51264BA1339.D16F 4GB vs Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

总分

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

差异规格评论

差异

Crucial Technology CT51264BA1339.D16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 39

左右 -70% 更低的延时
更快的读取速度，GB/s

16.8 13.2

测试中的平均数值
更快的写入速度，GB/s

12.5 8.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.D16F 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 23
读取速度，GB/s

13.2 16.8
写入速度，GB/s

8.2 12.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 12 14 15
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2165 2795

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Avant Technology J642GU42J2320NQ 16GB

Avant Technology J642GU42J2320NQ 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Crucial Technology 8G4US2400.M8B1 8GB

Crucial Technology 8G4US2400.M8B1 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

SK Hynix HMT125U6DFR8C-H9 2GB

SK Hynix HMT125U6DFR8C-H9 2GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Essencore Limited IM44GU48N26-FFFHM 4GB

Essencore Limited IM44GU48N26-FFFHM 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avant Technology W641GU42J7240NC 8GB

Avant Technology W641GU42J7240NC 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingston X2YH1K-MIE 16GB

Kingston X2YH1K-MIE 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingston X5H5PW-MIB 8GB

Kingston X5H5PW-MIB 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB