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Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
比较
Crucial Technology CT51264BA1339.D16F 4GB vs G Skill Intl F4-3600C14-16GTRS 16GB
总分
Crucial Technology CT51264BA1339.D16F 4GB
总分
G Skill Intl F4-3600C14-16GTRS 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3600C14-16GTRS 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
39
左右 -70% 更低的延时
更快的读取速度,GB/s
23
13.2
测试中的平均数值
更快的写入速度,GB/s
21.1
8.2
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-3600C14-16GTRS 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
23
读取速度,GB/s
13.2
23.0
写入速度,GB/s
8.2
21.1
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2165
4565
Crucial Technology CT51264BA1339.D16F 4GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
G Skill Intl F4-3600C14-16GTRS 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kreton Corporation 51624xxxx68x35xxxx 2GB
SK Hynix GKE800SO102408-2400 8GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F4-3200C16-8GTZKW 8GB
Kingston KF552C40-16 16GB
G Skill Intl F4-3733C17-16GTZR 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3466C16-4GVK 4GB
Kingston KHX1600C9D3/8G 8GB
Essencore Limited KD48GS481-26N1600 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2133C15-8GRR 8GB
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HMA84GL7AMR4N-UH 32GB
Kingston 9965662-016.A00G 16GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Samsung M378B5173BH0-CH9 4GB
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BL16G32C16U4BL.16FE 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS4G4D26BFSB.8FBD2 4GB
Samsung 1600 CL10 Series 8GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C16-16GTZKY 16GB
报告一个错误
×
Bug description
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