Crucial Technology CT51264BA1339.D16F 4GB vs Samsung M378A2K43BB1-CRC 16GB

总分

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

总分

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

差异规格评论

差异

Crucial Technology CT51264BA1339.D16F 4GB

需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB

报告一个错误

Samsung M378A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M378A2K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 39

左右 -26% 更低的延时
更快的读取速度，GB/s

16 13.2

测试中的平均数值
更快的写入速度，GB/s

10.8 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA1339.D16F 4GB

Samsung M378A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 31
读取速度，GB/s

13.2 16.0
写入速度，GB/s

8.2 10.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2165 2816

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-004.A00LF 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston ACR32D4U2S1ME-8 8GB

Kingston ACR32D4U2S1ME-8 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Samsung M4 70T2864QZ3-CF7 1GB

G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB