Crucial Technology CT51264BA160B.C16F 4GB vs Crucial Technology BLS16G4D32AESC.M16FE 16GB

总分

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

总分

Crucial Technology BLS16G4D32AESC.M16FE 16GB

Crucial Technology BLS16G4D32AESC.M16FE 16GB

差异规格评论

差异

Crucial Technology CT51264BA160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA160B.C16F 4GB

报告一个错误

Crucial Technology BLS16G4D32AESC.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D32AESC.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

18.1 14.3

测试中的平均数值
更快的写入速度，GB/s

14.9 9.4

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology BLS16G4D32AESC.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

14.3 18.1
写入速度，GB/s

9.4 14.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2142 3673

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMA81GS6CJRJR-VK 8GB

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Crucial Technology BLS16G4D32AESC.M16FE 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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SK Hynix HMA81GS6CJR8N-XN 8GB

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Mushkin 994083 4GB

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Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Crucial Technology CT8G4SFS832A.M8FRS 8GB

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SK Hynix HMT351U6AFR8C-H9 4GB

SK Hynix HMT351U6AFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

G Skill Intl F4-3000C16-8GSXWB 8GB

G Skill Intl F4-3000C16-8GSXWB 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M471A1K43BB1-CRC 8GB

Samsung M471A1K43BB1-CRC 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C14-8GTZ 8GB

G Skill Intl F4-3000C14-8GTZ 8GB