Crucial Technology CT51264BA160B.C16F 4GB vs Patriot Memory (PDP Systems) PSD48G266681S 8GB

总分

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

总分

Patriot Memory (PDP Systems) PSD48G266681S 8GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

差异规格评论

差异

Crucial Technology CT51264BA160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BA160B.C16F 4GB

报告一个错误

Patriot Memory (PDP Systems) PSD48G266681S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD48G266681S 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 41

左右 -28% 更低的延时
更快的写入速度，GB/s

10.3 9.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BA160B.C16F 4GB

Patriot Memory (PDP Systems) PSD48G266681S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 32
读取速度，GB/s

14.3 14.3
写入速度，GB/s

9.4 10.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2142 2464

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F4-4000C18-16GVK 16GB

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Team Group Inc. TEAMGROUP-UD4-2666 8GB

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Patriot Memory (PDP Systems) 3000 C16 Series 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

SK Hynix HMT451U7BFR8C-RD 4GB

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A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Avant Technology J642GU42J9266NF 16GB

Avant Technology J642GU42J9266NF 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB