Crucial Technology CT51264BD1339.M16F 4GB vs Avant Technology W6451U66J5213ND 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Avant Technology W6451U66J5213ND 4GB

Avant Technology W6451U66J5213ND 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 19% 更低的延时

Avant Technology W6451U66J5213ND 4GB

需要考虑的原因
Avant Technology W6451U66J5213ND 4GB

报告一个错误

更快的读取速度，GB/s

15.6 12.1

测试中的平均数值
更快的写入速度，GB/s

12.3 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Avant Technology W6451U66J5213ND 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 31
读取速度，GB/s

12.1 15.6
写入速度，GB/s

8.6 12.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2316

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

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G Skill Intl F4-3466C18-8GSXW 8GB

Kingston 9905471-071.A00LF 8GB

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Kingston XN205T-HYD2 16GB

Kingston XN205T-HYD2 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3600C18-16GVK 16GB

G Skill Intl F4-3600C18-16GVK 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

G Skill Intl F4-3300C16-8GTZ 8GB

G Skill Intl F4-3300C16-8GTZ 8GB