Crucial Technology CT51264BD1339.M16F 4GB vs Corsair CMD64GX4M8X3800C19 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Corsair CMD64GX4M8X3800C19 8GB

Corsair CMD64GX4M8X3800C19 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 19% 更低的延时
更快的读取速度，GB/s

12.1 11.6

测试中的平均数值

Corsair CMD64GX4M8X3800C19 8GB

需要考虑的原因
Corsair CMD64GX4M8X3800C19 8GB

报告一个错误

更快的写入速度，GB/s

13.2 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMD64GX4M8X3800C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 31
读取速度，GB/s

12.1 11.6
写入速度，GB/s

8.6 13.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2783

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KVR16N11/8-SP 8GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Corsair CMT16GX4M2C3200C14 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

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Corsair CMK16GX4M2Z3600C20 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

G Skill Intl F4-4000C16-8GVK 8GB

G Skill Intl F4-4000C16-8GVK 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB