Crucial Technology CT51264BD1339.M16F 4GB vs Corsair CMK8GX4M2B3200C16 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Corsair CMK8GX4M2B3200C16 4GB

Corsair CMK8GX4M2B3200C16 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 11% 更低的延时

Corsair CMK8GX4M2B3200C16 4GB

需要考虑的原因
Corsair CMK8GX4M2B3200C16 4GB

报告一个错误

更快的读取速度，GB/s

18.2 12.1

测试中的平均数值
更快的写入速度，GB/s

13.5 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMK8GX4M2B3200C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 28
读取速度，GB/s

12.1 18.2
写入速度，GB/s

8.6 13.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 3015

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 9905702-150.A00G 8GB

Kingston 9905702-150.A00G 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Samsung M471A1G44BB0-CWE 8GB

Samsung M471A1G44BB0-CWE 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Crucial Technology CT4G4SFS8213.C8FBD2 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M378A1K43EB2-CVF 8GB

Samsung M378A1K43EB2-CVF 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Transcend Information JM2666HLG-16GK 8GB

Transcend Information JM2666HLG-16GK 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

Apacer Technology 78.C1GMS.C7Z0C 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M392B5273CH0-YH9 4GB

Samsung M392B5273CH0-YH9 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston XRGM6C-MIB 16GB

Kingston XRGM6C-MIB 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston MSI24D4U7D8MH-16 16GB

Kingston MSI24D4U7D8MH-16 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Crucial Technology BLS4G4D26BFSB.8FBD2 4GB

Kingston 99P5471-016.A00LF 8GB

Kingston 99P5471-016.A00LF 8GB

Apacer Technology GD2.2229BH.001 16GB

Apacer Technology GD2.2229BH.001 16GB