Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-4000C18-8GTZR 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTZR 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 29

左右 14% 更低的延时

G Skill Intl F4-4000C18-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GTZR 8GB

报告一个错误

更快的读取速度，GB/s

18 12.1

测试中的平均数值
更快的写入速度，GB/s

16.5 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-4000C18-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 29
读取速度，GB/s

12.1 18.0
写入速度，GB/s

8.6 16.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 3779

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Micron Technology 36ADS2G72PZ-2G1A1 16GB

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Kingston 99U5429-007.A00LF 2GB

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Crucial Technology CT16G4DFD8213.C16FBD 16GB

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Kingston 99P5471-016.A00LF 8GB

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Crucial Technology CT16G4DFD8213.16FDD1 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB

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Kingston KHX3200C16D4/8GX 8GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Teikon TMA851S6AFR6N-UHHC 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CT16G4DFRA266.C8FB 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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V-GEN D4H4GS24A8 4GB

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Corsair VS1GB800D2 1GB

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A-DATA Technology DDR4 3600 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F4-4000C18-16GTZR 16GB