Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-4000C19-16GTZKK 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

G Skill Intl F4-4000C19-16GTZKK 16GB

G Skill Intl F4-4000C19-16GTZKK 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

G Skill Intl F4-4000C19-16GTZKK 16GB

需要考虑的原因
G Skill Intl F4-4000C19-16GTZKK 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 25

左右 -9% 更低的延时
更快的读取速度，GB/s

19.8 12.1

测试中的平均数值
更快的写入速度，GB/s

18.2 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-4000C19-16GTZKK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 23
读取速度，GB/s

12.1 19.8
写入速度，GB/s

8.6 18.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 4128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 2GB-DDR2 800Mhz 2GB

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Samsung M378A2K43BB1-CRC 16GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB

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Patriot Memory (PDP Systems) PSD416G24002 16GB

Patriot Memory (PDP Systems) PSD416G24002 16GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB