Crucial Technology CT51264BD1339.M16F 4GB vs Kingston 9905630-052.A00G 16GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Kingston 9905630-052.A00G 16GB

Kingston 9905630-052.A00G 16GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 30

左右 17% 更低的延时

Kingston 9905630-052.A00G 16GB

需要考虑的原因
Kingston 9905630-052.A00G 16GB

报告一个错误

更快的读取速度，GB/s

14 12.1

测试中的平均数值
更快的写入速度，GB/s

11.5 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9905630-052.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 30
读取速度，GB/s

12.1 14.0
写入速度，GB/s

8.6 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2408

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited MD4U0840180BCW 8GB

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V-Color Technology Inc. TL48G30S8KGRGB15 8GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT8G4DFRA32A.M4FF 8GB

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SK Hynix HMA84GR7JJR4N-VK 32GB

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Swissbit MEU25664D6BC2EP-30 2GB

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Mushkin MRA4S320GJJM16G 16GB

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Samsung 1600 CL10 Series 8GB

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Kingston 9905598-028.A00G 8GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

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Samsung M378A2K43EB1-CWE 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Kingston 9905630-051.A00G 16GB

Kingston 9905630-051.A00G 16GB

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Apacer Technology 78.01G86.9H50C 1GB

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SK Hynix HMA81GS6CJR8N-XN 8GB

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Samsung M393B1K70CH0-CH9 8GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB