RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Crucial Technology CT51264BD1339.M16F 4GB vs Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

总分
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分
star star star star star
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

差异 规格 评论

差异

Crucial Technology CT51264BD1339.M16F 4GB 需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 49
    左右 49% 更低的延时
  • 更快的读取速度，GB/s
    12.1 left arrow 10.7
    测试中的平均数值
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB 需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 49
  • 读取速度，GB/s
    12.1 left arrow 10.7
  • 写入速度，GB/s
    8.6 left arrow 8.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 2504

Crucial Technology CT51264BD1339.M16F 4GB RAM的比较

Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Apacer Technology 76.D105G.D090B 16GB
Apacer Technology 76.D105G.D090B 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston X3XCFP-HYA 8GB
Kingston X3XCFP-HYA 8GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Corsair CMSX64GX4M2A3200C22 32GB
Corsair CMSX64GX4M2A3200C22 32GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Transcend Information JM3200HLB-16GK 8GB
Transcend Information JM3200HLB-16GK 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Micron Technology M471A1K43CB1-CTD 8GB
Micron Technology M471A1K43CB1-CTD 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMT32GX4M4Z3200C16 8GB
Corsair CMT32GX4M4Z3200C16 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-4000C19-4GTZ 4GB
G Skill Intl F4-4000C19-4GTZ 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston HP26D4U9S8MD-8 8GB
Kingston HP26D4U9S8MD-8 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Corsair CMK32GX4M2C3000C16 16GB
Corsair CMK32GX4M2C3000C16 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston KTP9W1-MIE 16GB
Kingston KTP9W1-MIE 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston XN205T-MIE 16GB
Kingston XN205T-MIE 16GB
内存RAM