Crucial Technology CT51264BD1339.M16F 4GB vs Micron Technology 8ATF1G64HZ-2G6E1 8GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Micron Technology 8ATF1G64HZ-2G6E1 8GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时

Micron Technology 8ATF1G64HZ-2G6E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6E1 8GB

报告一个错误

更快的读取速度，GB/s

15 12.1

测试中的平均数值
更快的写入速度，GB/s

11.5 8.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

12.1 15.0
写入速度，GB/s

8.6 11.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2045 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston KF560C40-16 16GB

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Corsair CMD128GX4M8B3200C16 16GB

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Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB