Crucial Technology CT51264BD1339.M16F 4GB vs Samsung M378A5143DB0-CPB 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 36

左右 31% 更低的延时

Samsung M378A5143DB0-CPB 4GB

需要考虑的原因
Samsung M378A5143DB0-CPB 4GB

报告一个错误

更快的读取速度，GB/s

14.4 12.1

测试中的平均数值
更快的写入速度，GB/s

10.6 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M378A5143DB0-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 36
读取速度，GB/s

12.1 14.4
写入速度，GB/s

8.6 10.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2045 2490

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMSO4GX4M1A2133C15 4GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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A-DATA Technology DQKD1A08 1GB

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Samsung M471B5273DH0-CH9 4GB

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SK Hynix HMA82GU6DJR8N-WM 16GB

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Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Corsair CMK16GX4M4C3200C15 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

Corsair CMK32GX5M2B5600C36 16GB

Corsair CMK32GX5M2B5600C36 16GB

Corsair CMR16GX4M2Z3200C16 8GB

Corsair CMR16GX4M2Z3200C16 8GB

Kingston 9905701-132.A00G 16GB

Kingston 9905701-132.A00G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB