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Crucial Technology CT51264BD1339.M16F 4GB
Transcend Information TS512MLH64V1H 4GB
比较
Crucial Technology CT51264BD1339.M16F 4GB vs Transcend Information TS512MLH64V1H 4GB
总分
Crucial Technology CT51264BD1339.M16F 4GB
总分
Transcend Information TS512MLH64V1H 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB
报告一个错误
需要考虑的原因
Transcend Information TS512MLH64V1H 4GB
报告一个错误
低于PassMark测试中的延时,ns
23
25
左右 -9% 更低的延时
更快的读取速度,GB/s
16.4
12.1
测试中的平均数值
更快的写入速度,GB/s
11.7
8.6
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BD1339.M16F 4GB
Transcend Information TS512MLH64V1H 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
23
读取速度,GB/s
12.1
16.4
写入速度,GB/s
8.6
11.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2045
2575
Crucial Technology CT51264BD1339.M16F 4GB RAM的比较
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Transcend Information TS512MLH64V1H 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
takeMS International AG TMS2GB264D082-805G 2GB
Kingston 9905713-017.A00G 4GB
PNY Electronics PNY 2GB
Kingston KHX2666C13D4/8GX 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Transcend Information TS512MLH64V1H 4GB
Samsung M471B5273EB0-CK0 4GB
Netac Technology Co Ltd EKBLACK4163216AD 8GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Crucial Technology CT102464BA160B.M16 8GB
Teikon TMA851S6AFR6N-UHHC 4GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK16GX4M2Z3600C18 8GB
Samsung M378B5673EH1-CF8 2GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4000C19-16GTZR 16GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFD824A.C16FBD2 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Apacer Technology 78.C1GMM.AUF0B 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2133C15-8GFXR 8GB
Samsung M378B5773DH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
报告一个错误
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Bug description
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