Crucial Technology CT51264BD160B.C16F 4GB vs Corsair CMD16GX4M4C3200C15 4GB

总分

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

总分

Corsair CMD16GX4M4C3200C15 4GB

Corsair CMD16GX4M4C3200C15 4GB

差异规格评论

差异

Crucial Technology CT51264BD160B.C16F 4GB

需要考虑的原因
Crucial Technology CT51264BD160B.C16F 4GB

报告一个错误

Corsair CMD16GX4M4C3200C15 4GB

需要考虑的原因
Corsair CMD16GX4M4C3200C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

14.3 13.9

测试中的平均数值
更快的写入速度，GB/s

12.0 9.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMD16GX4M4C3200C15 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

13.9 14.3
写入速度，GB/s

9.7 12.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2366 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M471A5143DB0-CPB 4GB

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G Skill Intl F4-3200C14-32GVK 32GB

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Samsung M393B5170FH0-CK0 4GB

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Golden Empire CL16-16-16 D4-2400 8GB

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G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

Samsung M393B5170FH0-CH9 4GB

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Samsung M471A2K43CB1-CTD 16GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS8G4D240FSB.16FADG 8GB

Crucial Technology BLS8G4D240FSB.16FADG 8GB

Crucial Technology CT51264BA1339.D16F 4GB

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Crucial Technology BL16G32C16U4BL.M16FE 16GB

Crucial Technology BL16G32C16U4BL.M16FE 16GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

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G Skill Intl F4-2933C14-8GTZRX 8GB

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AMD AE34G1601U1 4GB

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